Paper Title:
Investigation of Charge Carrier Lifetime Temperature-Dependence in 4H-SiC Diodes
  Abstract

Recently published experimental results for 4H–SiC diodes up to 700 °C are used to deduce the hole lifetime temperature-dependence in n-base for high temperature range. The reverse recovery measurements are interpreted by the nonisothermal drift-diffusion simulator DYNAMIT. The uncertainties from lifetimes unknown behavior in emitter layers and consequences from possible nonuniform lifetime distribution in n-base are analyzed. Results show that up to temperature 400 °C nearly quadratic dependence of lifetime versus temperature τ ~ T 2 holds. At higher temperatures lifetime growth is accelerated approximately to quartic dependence τ ~ T 4.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
375-378
DOI
10.4028/www.scientific.net/MSF.556-557.375
Citation
A. Udal, E. Velmre, "Investigation of Charge Carrier Lifetime Temperature-Dependence in 4H-SiC Diodes", Materials Science Forum, Vols. 556-557, pp. 375-378, 2007
Online since
September 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: K.A. Lee, Young Won Chang, Chong Soo Lee
Abstract:A series of tensile and load relaxation behaviors in B2 type β-CuZn alloy have been examined to clarify the strain rate & the temperature...
841
Authors: Krista Chindanon, Huang De Lin, Galyna Melnychuk, Yaroslav Koshka
Abstract:In this work, nitrogen doping was investigated during the low-temperature halo-carbon epitaxial growth of 4H-SiC on Si- and C-faces. The...
159
Authors: Hao Jie Lv, Guo Qing Hu, Xing Ye Wang
Chapter 8: Measurement
Abstract:In order to reveal the temperature dependence of a touch mode capacitive pressure sensor, temperature dependence of material parameters of...
2024
Authors: Hong Yan Lin, Chun Cai Wang, Cui Yan Yu, Tao Xu
Chapter 8: Energy Materials, Engineering Materials and Processing Technologies
Abstract:Two-step preparation technology was used to prepare anodic aluminum oxide (AAO) templates. Then deposit Ni nanowire arrays in nanopores of...
2064