Paper Title:
Mechanisms of Decrease in Hole Concentration in Al-Doped 4H-SiC by Irradiation of 200 keV Electrons
  Abstract

From the temperature dependence of the hole concentration p(T) in a lightly Al-doped 4H-SiC epilayer irradiated with several fluences of 200 keV electrons, the density of Al acceptors with 0.2 V E + eV decreases significantly with increasing fluence, whereas the density of unknown defects with 0.37 V E + eV increases with fluence and then decreases slightly. Although only C vacancies increase with fluence because 200 keV electrons can displace only C atoms, only the increase in the density of C monovacancies cannot explain the changes of p(T) by 200 keV electron irradiation. It may be necessary to consider the relationship between C vacancies and Al acceptors.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
379-382
DOI
10.4028/www.scientific.net/MSF.556-557.379
Citation
H. Matsuura, N. Minohara, Y. Inagawa, M. Takahashi, T. Ohshima, H. Itoh, "Mechanisms of Decrease in Hole Concentration in Al-Doped 4H-SiC by Irradiation of 200 keV Electrons", Materials Science Forum, Vols. 556-557, pp. 379-382, 2007
Online since
September 2007
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