Paper Title:
Micro-Photoluminescence Mapping of Defect Structures in SiC Wafers
  Abstract

Micro-photoluminescence can be used to image electrically active structural defects in SiC. Under suitable excitation conditions it is possible to observe both band-edge PL and near bandedge PL from recombination via a shallow boron acceptor. The intensity of the band-edge emission is related to the carrier lifetime – and is reduced by the presence of structural or interfacial defects. The intensity of the deep level PL is a complex function of the number of radiative centers and the number of centers limiting carrier lifetime. Micro-PL mapping can provide information on the spatial distribution of electrically active defects in SiC.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
383-386
DOI
10.4028/www.scientific.net/MSF.556-557.383
Citation
J. Hennessy, T. Ryan, "Micro-Photoluminescence Mapping of Defect Structures in SiC Wafers", Materials Science Forum, Vols. 556-557, pp. 383-386, 2007
Online since
September 2007
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Price
$32.00
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