Paper Title:
Micro-Raman Investigation of Defects in a 4H-SiC Homoepilayer
  Abstract

Three types of defects, namely defect I, defect II, defect III, in the 4H-SiC homoepilayer were investigated by micro-raman scattering measurement. These defects all originate from a certain core and are composed of (I) a wavy tail region, (II) two long tails, the so called comet and (III) three plaits. It was found that there are 3C-SiC inclusions in the cores of defect II and defect III and the shape of inclusion determines the type of defect II or defect III. If the core contains a triangle-shaped inclusion, the defect III would be formed; otherwise, the defect II was formed. No inclusion was observed in the core of the defect I. The mechanisms of these defects are discussed.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
387-390
DOI
10.4028/www.scientific.net/MSF.556-557.387
Citation
X. F. Liu, G. S. Sun, J. M. Li, Y. M. Zhao, J.Y. Li, L. Wang, W. S. Zhao, M.C. Luo, Y. P. Zeng, "Micro-Raman Investigation of Defects in a 4H-SiC Homoepilayer", Materials Science Forum, Vols. 556-557, pp. 387-390, 2007
Online since
September 2007
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Price
$32.00
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