Paper Title:
Raman Spectra of a 4H-SiC Epitaxial Layer on Porous and Non-Porous 4H-SiC Substrates
  Abstract

A lightly doped n-type homo-epitaxial layer was grown by CVD onto a heavily doped n-type 4H-SiC substrate for which half of the surface had been made porous by photoelectrochemical etching. Raman spectra are obtained in the optic phonon region using three scattering geometries. An effective medium model for the porous layer is used to assist in the interpretation of the spectra. This work demonstrates that the contributions to the Raman spectra of the various layers in a sample with multiple 4H-SiC layers can be extracted.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
415-418
DOI
10.4028/www.scientific.net/MSF.556-557.415
Citation
M. J. Clouter, Y. Ke, R. P. Devaty, W. J. Choyke, Y. Shishkin, S. E. Saddow, "Raman Spectra of a 4H-SiC Epitaxial Layer on Porous and Non-Porous 4H-SiC Substrates", Materials Science Forum, Vols. 556-557, pp. 415-418, 2007
Online since
September 2007
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Price
$32.00
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