Paper Title:
The Premature Breakdown in 6H-SiC p-n Junction
  Abstract

In the 6H-SiC p+-n--n+ junction the effect of the premature breakdown has been revealed. This effect stimulated by the small temperature increase and illumination by light with energy greater than the bandgap energy of 6H-SiC. The breakdown field appears to be 20% less than the intrinsic breakdown field in these structures.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
431-434
DOI
10.4028/www.scientific.net/MSF.556-557.431
Citation
V. I. Sankin, A. M. Monakhov, P. P. Shkrebiy, "The Premature Breakdown in 6H-SiC p-n Junction", Materials Science Forum, Vols. 556-557, pp. 431-434, 2007
Online since
September 2007
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Price
$32.00
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