Paper Title:
Theory of the Stark Effect on the Donor Levels in 4H Silicon Carbide
  Abstract

The paper presents the results of a quantitative theoretical calculation concerning the shift and the splitting of the ground-state manifold of the nitrogen donor in 4H-SiC under uniform electric field. Two cases are distinguished corresponding to a field applied parallel and perpendicular to the crystal axis. A comparison with the phosphorus donor in Si is carried out.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
435-438
DOI
10.4028/www.scientific.net/MSF.556-557.435
Citation
I. G. Ivanov, E. Janzén, "Theory of the Stark Effect on the Donor Levels in 4H Silicon Carbide", Materials Science Forum, Vols. 556-557, pp. 435-438, 2007
Online since
September 2007
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Price
$32.00
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