Paper Title:
Point Defects and their Aggregation in Silicon Carbide
  Abstract

The existence of point defects is one of the key problems in SiC technology. Combined experimental and theoretical investigations can be successful in identification of point defects. We report the identification of a basic intrinsic defect in p-type SiC. In addition, we predict the existence of interstitial-related electrically active defects which may be detected by experimental tools.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
439-444
DOI
10.4028/www.scientific.net/MSF.556-557.439
Citation
A. Gali, T. Hornos, M. Bockstedte, T. Frauenheim, "Point Defects and their Aggregation in Silicon Carbide", Materials Science Forum, Vols. 556-557, pp. 439-444, 2007
Online since
September 2007
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Price
$32.00
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