Paper Title:
A Theoretical Study on Aluminium-Related Defects in SiC
  Abstract

We have investigated several aluminum-related complexes in 4H-SiC by ab initio supercell calculations. The binding energies of the defects predict high thermal stability and complex formation between aluminum and carbon interstitials in SiC. We show that the carbon vacancy can be attached to a shallow the aluminum acceptor and form a very stable defect. We also found that aluminum interstitial forms stable and metastable complexes with one or two carbon interstitials. The possible relation of these defects to the recently found aluminum- related DLTS centers is also discussed.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
445-448
DOI
10.4028/www.scientific.net/MSF.556-557.445
Citation
T. Hornos, A. Gali, N. T. Son, E. Janzén, "A Theoretical Study on Aluminium-Related Defects in SiC", Materials Science Forum, Vols. 556-557, pp. 445-448, 2007
Online since
September 2007
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Price
$32.00
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