Paper Title:
Intrinsic Defects in Semi-Insulating SiC: Deep Levels and their Roles in Carrier Compensation
  Abstract

Vacancies, divacancies and carbon vacancy-carbon antisite pairs are found by electron paramagnetic resonance (EPR) to be dominant defects in high-purity semi-insulating (HPSI) 4HSiC substrates having different thermal activation energies of the resistivity ranging from ~0.8 eV to ~1.6 eV. Based on EPR results and previously reported data, the energy positions of several acceptor states of the vacancies and vacancy-related complexes are estimated. These deep levels are suggested to be associated to different thermal activation energies and responsible for the semiinsulating behaviour in HPSI SiC substrates. Their role in carrier compensation is discussed.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
465-468
DOI
10.4028/www.scientific.net/MSF.556-557.465
Citation
N. T. Son, P. Carlsson, B. Magnusson, E. Janzén, "Intrinsic Defects in Semi-Insulating SiC: Deep Levels and their Roles in Carrier Compensation", Materials Science Forum, Vols. 556-557, pp. 465-468, 2007
Online since
September 2007
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