Paper Title:
New Insight in Scandium-Mediated Growth Techniques: Sc-Related Defects in 4H-SiC and 6H-SiC
  Abstract

Scandium can be used to influence the stoichiometry of SiC during growth of the hexagonal polytypes. Using PL-EPR and total energy calculations in the framework of density functional theory, scandium is predicted to be built in predominantly at the Si-sublattice in form of ScSi acceptors with acceptor levels at 0.55 eV (6H-SiC) and 0.48 eV (4H-SiC). In addition, new PL-EPR spectra are found with a large anisotropy in the g-tensor suggesting defect pairs as an origin.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
469-472
DOI
10.4028/www.scientific.net/MSF.556-557.469
Citation
U. Gerstmann, S. Greulich-Weber, E. Rauls, J. M. Spaeth, E. N. Kalabukhova, E.N. Mokhov, F. Mauri, "New Insight in Scandium-Mediated Growth Techniques: Sc-Related Defects in 4H-SiC and 6H-SiC", Materials Science Forum, Vols. 556-557, pp. 469-472, 2007
Online since
September 2007
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$32.00
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