Paper Title:
Thick Epilayer for Power Devices
  Abstract

Growth of thick epitaxial SiC layers needed for high power devices is presented for horizontal hot-wall CVD (HWCVD) reactors. We demonstrate thickness of epilayer of 100 μm and more with good morphology, low-doping with no doping variation through the whole thick layer and reasonable carrier lifetime which mainly depends on the substrate quality. Typical epidefects are described and their density can dramatically be reduced when choosing correctly the growth conditions as well as the polishing of the surface prior to the growth. The control of the doping and thickness uniformities as well as the run-to-run reproducibility is also presented. Various characterization techniques such as optical microscopy, AFM, reflectance, CV, PL and minority carrier lifetime have been used. Results of high-voltage SiC Schottky power devices are presented.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
47-52
DOI
10.4028/www.scientific.net/MSF.556-557.47
Citation
A. Henry, J. ul Hassan, H. Pedersen, F. C. Beyer, P. Bergman, S. Andersson, E. Janzén, P. Godignon, "Thick Epilayer for Power Devices", Materials Science Forum, Vols. 556-557, pp. 47-52, 2007
Online since
September 2007
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Price
$32.00
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