Point Defects in 4H SiC Grown by Halide Chemical Vapor Deposition
| Periodical | Materials Science Forum (Volumes 556 - 557) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2006 |
| Edited by | N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall |
| Pages | 473-476 |
| DOI | 10.4028/www.scientific.net/MSF.556-557.473 |
| Citation | Mary Ellen Zvanut et al., 2007, Materials Science Forum, 556-557, 473 |
| Online since | September, 2007 |
| Authors | Mary Ellen Zvanut, Hun Jae Chung, A.Y. Polyakov, Marek Skowronski |
| Keywords | 4H Silicon Carbide, Chemical Vapor Deposition (CVD), Electron Paramagnetic Resonance (EPR), Point Defect |
| Price | US$ 28,- |
Halide chemical vapor deposition (HCVD) allows for rapid growth while maintaining the purity afforded by a CVD process. While several shallow and deep defect levels have been identified in 6H HCVD substrates using electrical techniques, here we examine several different point defects found in 4H n-type HCVD SiC using electron paramagnetic resonance (EPR) spectroscopy. One spectrum, which exhibits axial symmetry and broadens upon heating, may represent a collection of shallow defects. The other prominent defect has the g tensor of the negatively charged carbon vacancy, but additional hyperfine lines suggest a more complex center. The role of these defects is not yet determined, but we note that the concentrations are similar to those found for the electrically detected defect levels, making them a reasonable source of electrically active centers.
