Paper Title:
Formation of Deep Traps at the 4H-SiC/SiO2 Interface when Utilizing Sodium Enhanced Oxidation
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
517-520
DOI
10.4028/www.scientific.net/MSF.556-557.517
Citation
F. Allerstam, G. Gudjónsson, E. Ö. Sveinbjörnsson, T. Rödle, R. Jos, "Formation of Deep Traps at the 4H-SiC/SiO2 Interface when Utilizing Sodium Enhanced Oxidation", Materials Science Forum, Vols. 556-557, pp. 517-520, 2007
Online since
September 2007
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Price
$32.00
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