Paper Title:
Initial Stages of the Graphite-SiC(0001) Interface Formation Studied by Photoelectron Spectroscopy
  Abstract

Graphitization of the 6H-SiC(0001) surface as a function of annealing temperature has been studied by ARPES, high resolution XPS, and LEED. For the initial stage of graphitization – the 6√3 reconstructed surface – we observe σ-bands characteristic of graphitic sp2-bonded carbon. The π-bands are modified by the interaction with the substrate. C1s core level spectra indicate that this layer consists of two inequivalent types of carbon atoms. The next layer of graphite (graphene) formed on top of the 6√3 surface at TA=1250°C-1300°C has an unperturbed electronic structure. Annealing at higher temperatures results in the formation of a multilayer graphite film. It is shown that the atomic arrangement of the interface between graphite and the SiC(0001) surface is practically identical to that of the 6√3 reconstructed layer.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
525-528
DOI
10.4028/www.scientific.net/MSF.556-557.525
Citation
K. V. Emtsev, T. Seyller, F. Speck, L. Ley, P. Stojanov, J.D. Riley, R.C.G. Leckey, "Initial Stages of the Graphite-SiC(0001) Interface Formation Studied by Photoelectron Spectroscopy", Materials Science Forum, Vols. 556-557, pp. 525-528, 2007
Online since
September 2007
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$32.00
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