Paper Title:
The Mechanism of Interface State Passivation by NO
  Abstract

Preliminary results of a systematic theoretical study on the reactions of NO with a model 4H-SiC/SiO2 interface are presented. We show, that nitridation is a complex process, in which the balance between various mechanisms depends on doping and temperature. For weakly doped (1015-16 cm-3) n-type SiC, the crucial effect is an additional oxidation without creation of excess carbon at the interface.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
541-544
DOI
10.4028/www.scientific.net/MSF.556-557.541
Citation
P. Deák, T. Hornos, C. Thill, J. Knaup, A. Gali, T. Frauenheim, "The Mechanism of Interface State Passivation by NO", Materials Science Forum, Vols. 556-557, pp. 541-544, 2007
Online since
September 2007
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Price
$35.00
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