Paper Title:
Control of the Flatband Voltage of 4H-SiC Metal-Oxide Semiconductor (MOS) Capacitors by Co-Implantation of Nitrogen and Aluminum
  Abstract

In n-type 4H-SiC, over-oxidation of an implanted surface-near, Gaussian nitrogen-profile results in MOS capacitors, which possess a distinctly reduced density of interface states Dit and an undesirable large negative flatband voltage UFB. Their values are determined by the implantation parameters and the thickness of the oxide layer. The negative flatband voltage can strongly be compensated in the case that a Gaussian aluminum-profile is co-implanted prior to the oxidation. Depending on the conditions of the Al implantation, UFB can be controlled within a wide range. Secondary ion mass spectrometry analyses reveal that the implanted N and Al atoms are mobile in the oxide layer during the oxidation process and are partly accumulated at the SiC/SiO2 interface.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
555-560
DOI
10.4028/www.scientific.net/MSF.556-557.555
Citation
T. Frank, S. Beljakowa, G. Pensl, T. Kimoto, V. V. Afanas'ev, "Control of the Flatband Voltage of 4H-SiC Metal-Oxide Semiconductor (MOS) Capacitors by Co-Implantation of Nitrogen and Aluminum", Materials Science Forum, Vols. 556-557, pp. 555-560, 2007
Online since
September 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Florin Ciobanu, Thomas Frank, Gerhard Pensl, Valeri V. Afanas'ev, Sheron Shamuilia, Adolf Schöner, Tsunenobu Kimoto
Abstract:A near-surface Gaussian nitrogen (N) profile is implanted into the Si- or C-face of n-/ptype 4H-SiC epilayers prior to a standard oxidation...
991
Authors: Svetlana Beljakowa, Thomas Frank, Gerhard Pensl, Kun Yuan Gao, Florian Speck, Thomas Seyller
Abstract:An alternative oxidation technique is developed and built up, which provides monatomic oxygen during the whole oxidation process. The set-up...
627
Authors: Antonella Poggi, Francesco Moscatelli, Yasuto Hijikata, Sandro Solmi, Michele Sanmartin, Fabrizio Tamarri, Roberta Nipoti
Abstract:Aiming to minimize the interface state density, we fabricated MOS capacitors on n-type 4H-SiC by using wet oxidation of nitrogen implanted...
639
Authors: Romain Esteve, Adolf Schöner, Sergey A. Reshanov, Carl Mikael Zetterling
Abstract:The electrical properties of oxides fabricated on n-type 3C-SiC (001) using wet oxidation and an advanced oxidation process combining SiO2...
829
Authors: Tomasz Sledziewski, Heiko B. Weber, Michael Krieger
3.2 MOS Processing, SiC-SiO2 Interfaces and other Dielectrics
Abstract:In this work the effect of phosphorus on the electrical properties of n-type 4H-SiC MOS capacitors is studied. Phosphorus ions are implanted...
697