Paper Title:
Post-Implantation Annealing of SiC: Relevance of the Heating Rate
  Abstract

With the aim to set a starting point for future investigations on the relevance of the heating ramp on the annealing of ion implanted SiC, a review study is presented here. This study focuses on the heating rate of different annealing setups and presents results that highlight the relevance of the heating ramp on the morphological, structural and electrical properties of ion implanted <0001> 4H- and 6H-SiC. The post-implantation annealing results of hot and room temperature implanted SiC are so different that their presentation is kept distinct.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
561-566
DOI
10.4028/www.scientific.net/MSF.556-557.561
Citation
R. Nipoti, "Post-Implantation Annealing of SiC: Relevance of the Heating Rate", Materials Science Forum, Vols. 556-557, pp. 561-566, 2007
Online since
September 2007
Authors
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: K. Narita, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Junji Senzaki, Shinichi Nakashima
905
Authors: Konstantin Vassilevski, J. Hedley, Alton B. Horsfall, C. Mark Johnson, Nicolas G. Wright
925
Authors: Anatoly M. Strel'chuk, Alexander A. Lebedev, D.V. Davydov, N.S. Savkina, Alexey N. Kuznetsov, M. Valakh, V.S. Kiselev, B.N. Romanyuk, Christophe Raynaud, Jean-Pierre Chante, Marie Laure Locatelli
1133
Authors: Hong Hua Zhang, Wei Min Gao, Y.L. Shen, B.S. Li
Abstract:Raman scattering spectroscopy, ultraviolet and visible absorption spectroscopy and Rutherford backscattering spectrometry were employed to...
287
Authors: N. Chuchvaga, E. Bogdanova, A. Strelchuk, Evgenia V. Kalinina, D.B. Shustov, M. Zamoryanskaya, V. Shkuratov
Chapter 7: Electrical and Structural Characterization
Abstract:A comparative research of the cathodoluminescence and electrical characteristics of the samples 4H-SiC irradiated with high energy Xe ions...
625