Paper Title:
Achieving Low Sheet Resistance from Implanted P-Type Layers in 4H-SiC Using High Temperature Graphite Capped Annealing

Low resistance p-layers are achieved in this paper using a graphite cap to protect SiC surface from out-diffusion of Si during high temperature post-implantation annealing, which is carried out to maximize the activation of Al dopant in 4H-SiC. With a graphite layer converted from photoresist, as high as 1700 and 1800oC post-implantation annealing is able to be used. Low RMS roughness of surface after high temperature annealing shows the effectiveness of the graphite cap. Small sheet resistance and resistivity are also achieved from the high temperature annealing. At room temperature, sheet resistances of 9.8 and 1.3 k/□, and the corresponding resistivities of 235 and 31 m-cm are obtained from 1700 and 1800oC annealed samples, respectively. The Al ionization energy extracted from Arrhenius plot is also close to the typical reported values. Therefore, it can be concluded that, using graphite cap could help to activate the Al dopant effectively during high temperature annealing.

Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Y. Wang, P. A. Losee, S. Balachandran, I. Bhat, T. P. Chow, Y. Wang, B.J. Skromme, J.K. Kim, E.F. Schubert, "Achieving Low Sheet Resistance from Implanted P-Type Layers in 4H-SiC Using High Temperature Graphite Capped Annealing", Materials Science Forum, Vols. 556-557, pp. 567-570, 2007
Online since
September 2007
Authors: K. Narita, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Junji Senzaki, Shinichi Nakashima
Authors: Masato Noborio, Jun Suda, Tsunenobu Kimoto
Abstract:Deposited SiN/SiO2 stack gate structures have been investigated to improve the 4H-SiC MOS interface quality. Capacitance-voltage...
Authors: Svetlana Beljakowa, Sergey A. Reshanov, Bernd Zippelius, Michael Krieger, Gerhard Pensl, Katsunori Danno, Tsunenobu Kimoto, Shinobu Onoda, Takeshi Ohshima, Fei Yan, Robert P. Devaty, Wolfgang J. Choyke
Abstract:Aluminum-doped 4H-SiC samples were either irradiated with high-energy electrons (170 keV or 1 MeV) or implanted with a box-shaped...
Authors: Tatsunori Sugimoto, Masataka Satoh, Tohru Nakamura, K. Mashimo, Hiroshi Doi, Masami Shibagaki
Abstract:The impact of CF4 plasma treatment on the surface roughening of SiC has been investigated for N ion implanted SiC(0001) which is implanted...