Paper Title:
A Designed Experiment Approach to Improvement and Understanding of the SiC Epitaxial Growth Process
  Abstract

A series of designed experiments have been conducted over a period of years in a multiwafer, planetary rotation, epitaxial reactor to quantify the effects of various epitaxial growth process parameters on the resulting SiC epitaxial layers. This paper summarizes the results obtained through statistically designed experiments varying process parameters and their resultant effect on the layer thickness, carrier concentration and the variability of these parameters wafer-to-wafer, and within a wafer.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
57-60
DOI
10.4028/www.scientific.net/MSF.556-557.57
Citation
J. D. Oliver , B. H. Ponczak, "A Designed Experiment Approach to Improvement and Understanding of the SiC Epitaxial Growth Process", Materials Science Forum, Vols. 556-557, pp. 57-60, 2007
Online since
September 2007
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Price
$32.00
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