Paper Title:
High Temperature Implantation of Aluminum in 4H Silicon Carbide
  Abstract

The influence of the implantation temperature on the surface roughness and the resistivity of aluminum implanted 4H-silicon carbide was determined. A dose of 1.2 ⋅1015cm-2 aluminum ions was implanted at temperatures between room temperature and 1000°C. A decrease of the surface roughness down to an rms-value of 12nm and a decrease in the resistivity down to 0.35Wcm were found with increasing implantation temperature. The influence of the implantation temperature on the resistivity was identified by modeling temperature dependent resistivity data. The results showed an increase in mobility with temperature due to the reduction of compensation centers.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
587-590
DOI
10.4028/www.scientific.net/MSF.556-557.587
Citation
M. Rambach, A. J. Bauer, H. Ryssel, "High Temperature Implantation of Aluminum in 4H Silicon Carbide", Materials Science Forum, Vols. 556-557, pp. 587-590, 2007
Online since
September 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Martin Rambach, Lothar Frey, Anton J. Bauer, Heiner Ryssel
Abstract:Characterization of post implantation annealing steps is done by extracting the activation and compensation data of implanted Al atoms....
827
Authors: Ryo Hattori, Tomokatsu Watanabe, T. Mitani, Hiroaki Sumitani, Tatsuo Oomori
Abstract:Crystalline recovery mechanism in the activation annealing process of Al implanted 4H-SiC crystals were experimentally investigated....
585
Authors: Xi Song, Anne Elisabeth Bazin, Jean François Michaud, Frédéric Cayrel, Marcin Zielinski, Marc Portail, Thierry Chassagne, Emmanuel Collard, Daniel Alquier
Abstract:Two electrical characterization methods were used to study 3C-SiC epilayers doped by nitrogen implantation: circular Transfer Length Method...
193
Authors: Xi Song, Jérôme Biscarrat, Anne Elisabeth Bazin, Jean François Michaud, Frédéric Cayrel, Marcin Zielinski, Thierry Chassagne, Marc Portail, Emmanuel Collard, Daniel Alquier
Chapter 4: Characterization: Devices and Material
Abstract:In this paper, we studied the influence of nitrogen implantation dose on both physical and electrical properties in 3C-SiC grown on Si (100)...
154
Authors: Jung Ho Lee, Jung Jun Ahn, Anders Hallén, Carl Mikael Zetterling, Sang Mo Koo
Chapter 5: Processing of SiC
Abstract:In this work, local oxidation behavior in phosphorous ion-implanted 4H-SiC has been investigated by using atomic force microscopy (AFM). The...
905