Paper Title:
Isochronal Annealing Study of Deep Levels in Hydrogen Implanted p-Type 4H-SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
591-594
DOI
10.4028/www.scientific.net/MSF.556-557.591
Citation
G. Alfieri, T. Kimoto, "Isochronal Annealing Study of Deep Levels in Hydrogen Implanted p-Type 4H-SiC", Materials Science Forum, Vols. 556-557, pp. 591-594, 2007
Online since
September 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.