Paper Title:
Reduction of Traps and Improvement of Carrier Lifetime in SiC Epilayer by Ion Implantation
  Abstract

Reduction in deep level defects and increase of carrier lifetime in 4H-SiC epilayer was observed after carbon ion implantation into the shallow surface layer of 250 nm and subsequent annealing above 1400 °C. The concentration of Z1/2 and EH6/7 traps was determined by deep level transient spectroscopy 4 μm below the implanted layer. After annealing, concentration of both traps decreased from 1013 cm-3 range to below the detection limit. Minority carrier lifetime almost doubled in the implanted samples compared to the unimplanted samples. We suggest that carbon interstitials from the implanted layer in-diffuse into the layer underneath during annealing and annihilate with carbon vacancies. Our results indicate that Z1/2 and EH6/7 traps are most likely carbon vacancy related.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
603-606
DOI
10.4028/www.scientific.net/MSF.556-557.603
Citation
L. Storasta, H. Tsuchida, "Reduction of Traps and Improvement of Carrier Lifetime in SiC Epilayer by Ion Implantation", Materials Science Forum, Vols. 556-557, pp. 603-606, 2007
Online since
September 2007
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Price
$32.00
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