Paper Title:
Selenium and Tellurium Double Donors in SiC
  Abstract

Selenium (Se) and tellurium (Te) ions are implanted into n-type 6H-, 4H- and 3C-SiC epilayers. Double-correlated deep level transient spectroscopy investigations reveal that both Se and Te atoms form double donors in SiC. The number of double donors observed corresponds to the number of inequivalent lattice sites of the particular SiC polytype. This observation is a strong hint that Se and Te atoms reside on lattice sites. The activation energies FEa of Te double donors are larger than the corresponding ones of Se double donors.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
607-610
DOI
10.4028/www.scientific.net/MSF.556-557.607
Citation
S. A. Reshanov, H. B. Weber, G. Pensl, A. Schöner, H. Nagasawa, "Selenium and Tellurium Double Donors in SiC", Materials Science Forum, Vols. 556-557, pp. 607-610, 2007
Online since
September 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Uwe Gerstmann, Siegmund Greulich-Weber, E. Rauls, Johann Martin Spaeth, Ekaterina N. Kalabukhova, E.N. Mokhov, Francesco Mauri
Abstract:Scandium can be used to influence the stoichiometry of SiC during growth of the hexagonal polytypes. Using PL-EPR and total energy...
469
Authors: Ivan V. Ilyin, Marina V. Muzafarova, P.G. Baranov, B.Ya. Ber, A.N. Ionov, E.N. Mokhov, Pavel A. Ivanov, M.A. Kaliteevskii, P.S. Kop'ev
Abstract:High concentration of two types of P donors up to 1017 cm-3 in SiC enriched with 30Si after neutron transmutation doping (NTD) has been...
599
Authors: Svetlana Beljakowa, Sergey A. Reshanov, Bernd Zippelius, Michael Krieger, Gerhard Pensl, Katsunori Danno, Tsunenobu Kimoto, Shinobu Onoda, Takeshi Ohshima, Fei Yan, Robert P. Devaty, Wolfgang J. Choyke
Abstract:Aluminum-doped 4H-SiC samples were either irradiated with high-energy electrons (170 keV or 1 MeV) or implanted with a box-shaped...
427
Authors: Margareta K. Linnarsson, Aurégane Audren, Anders Hallén
Abstract:Manganese diffusion in 4H-SiC for possible spintronic applications is investigated. Ion implantation is used to introduce manganese in n-type...
701
Authors: Hong Hua Zhang, Wei Min Gao, Y.L. Shen, B.S. Li
Abstract:Raman scattering spectroscopy, ultraviolet and visible absorption spectroscopy and Rutherford backscattering spectrometry were employed to...
287