Paper Title:
Acceleration Factors in Acceleration Life Test of Thermal Oxides on 4H-SiC Wafers
  Abstract

Acceleration factors in acceleration life test of thermal oxides grown on 4H-SiC(0001) wafers and influences of dislocations on oxide reliability have been investigated using time-dependent dielectric breakdown measurements. The thermal oxides are formed by dry oxidation at 1200°C followed by annealing in nitrogen atmosphere. Then, post oxidation annealing in wet ambient at 950°C or hydrogen atmosphere at 800°C were carried out for some of the oxides. Aluminum or poly-Si films with thickness of 300 nm were formed as gate electrodes. The temperature dependence of time-to-breakdown (tBD) indicates that activation energy (Ea) values for the Al-gate and Poly-Si-gate thermal oxides are 0.59 eV - 0.79 eV and 0.34 eV - 0.72 eV, respectively. Analyzing the electric field dependence of tBD, it was indicated that the values of electric acceleration parameters (β) are 2.7 cm/MV - 7.0 cm/MV and 5.8 cm/MV - 7.1 cm/MV for the Al-gate and poly-Si-gate thermal oxides, respectively. In addition, the charge-to-breakdown decreases with increase in the density of basal plane dislocation.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
635-638
DOI
10.4028/www.scientific.net/MSF.556-557.635
Citation
J. Senzaki, A. Shimozato, K. Fukuda, "Acceleration Factors in Acceleration Life Test of Thermal Oxides on 4H-SiC Wafers", Materials Science Forum, Vols. 556-557, pp. 635-638, 2007
Online since
September 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: A.K. Semennikov, S.Yu. Karpov, M.S. Ramm, A.E. Romanov, Yuri N. Makarov
383
Authors: Ping Wu, Murugesu Yoganathan, Ilya Zwieback, Yi Chen, Michael Dudley
Abstract:Etching of 4H-SiC wafers in molten KOH as a method for micropipe and dislocation density analysis was investigated. The obtained results...
333
Authors: Mariana I. Bertoni, Clémence Colin, Tonio Buonassisi
Abstract:Dislocations are known to be among the most deleterious performance-limiting defects in multicrystalline silicon (mc-Si) based solar cells....
11
Authors: Yukari Ishikawa, Koji Sato, Yoshihiro Okamoto, Noritaka Hayashi, Yong Zhao Yao, Yoshihiro Sugawara
Chapter 3: Physical Properties and Characterization of SiC
Abstract:Shallow defects, which were induced by mechanical treatment, on 4H-SiC wafers were investigated. The density and the distribution in depth of...
383
Authors: Yong Zhao Yao, Yukari Ishikawa, Koji Sato, Yoshihiro Sugawara, Katsunori Danno, Hiroshi Suzuki, Takeshi Bessho
Chapter 9: Processing Diverse
Abstract:To solve the problem that no preferential chemical etching is available for dislocation revelation from the carbon-face (C-face) of 4H-SiC, a...
829