Paper Title:
Growth and Properties of Gadolinium Oxide Dielectric Layers on Silicon Carbide for High-K Application
  Abstract

We investigated the growth, interface formation as well as the structural and electrical properties of crystalline gadolinium oxide (Gd2O3) directly grown on 6H-SiC(0001) substrates by molecular beam epitaxy. The Gd2O3 layers were found to grow epitaxially resulting in the formation of flat (111) oriented layers with the cubic bixbyite type of structure. X-ray photoelectron spectroscopy measurements reveal a silicate-like Gd2O3/SiC interface. Furthermore, conduction and valence band discontinuities at the Gd2O3/6H-SiC interface were estimated with 1.9 eV and 1.2 eV, respectively. The fabricated capacitors exhibit suitable dielectric properties at room temperature; such as a dielectric constant of ε = 22, a leakage current of 10-8 A/cm2@1V and breakdown fields > 4.3 MV/cm for layers with 14 nm thickness. The CV measurements exhibit only small negative flat band shifts and a very small hysteresis, resulting from fixed charges or interface trap levels in the range of 1x1012 cm-2. These properties make Gd2O3 suitable for high-k application also for SiC.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
655-658
DOI
10.4028/www.scientific.net/MSF.556-557.655
Citation
A. Fissel, M. Czernohorsky, R. Dagris, H.J. Osten, "Growth and Properties of Gadolinium Oxide Dielectric Layers on Silicon Carbide for High-K Application", Materials Science Forum, Vols. 556-557, pp. 655-658, 2007
Online since
September 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Kazuki Takahashi, Kanji Yasui, Maki Suemitsu, Ariyuki Kato, Yuichiro Kuroki, Masasuke Takata, Tadashi Akahane
Abstract:Gallium nitride (GaN) films were grown on SiC/Si(111) substrates by hot-mesh chemical vapor deposition (CVD) using trimethylgallium (TMG)...
261
Authors: Jeong Hyun Moon, Da Il Eom, Sang Yong No, Ho Keun Song, Jeong Hyuk Yim, Hoon Joo Na, Jae Bin Lee, Hyeong Joon Kim
Abstract:The La2O3 and Al2O3/La2O3 layers were grown on 4H-SiC by atomic layer deposition (ALD) method. The electrical properties of La2O3 on 4H-SiC...
1083
Authors: Antonella Poggi, Francesco Moscatelli, Andrea Scorzoni, Giovanni Marino, Roberta Nipoti, Michele Sanmartin
Abstract:Many investigations have been conducted on the growth conditions of SiO2 on SiC to improve the oxide quality and the properties of the...
979
Authors: Wlodek Strupiński, Rafał Bożek, Jolanta Borysiuk, Kinga Kościewicz, Andrzej Wysmolek, Roman Stepniewski, Jacek M. Baranowski
Abstract:The so-called “growth” of graphene was performed using a horizontal chemical vapor deposition (CVD) hot-wall reactor. In-situ etching in the...
199
Authors: Yusuke Kagei, Takashi Kirino, Yuu Watanabe, Shuhei Mitani, Yuki Nakano, Takashi Nakamura, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe
Abstract:We propose a treatment of nitrogen radical irradiation to 4H-SiC surfaces for improving thermally grown SiO2/SiC interfaces. X-ray...
507