Paper Title:
Study of Polyimide Films as Passivation for High Temperature High Voltage Silicon Carbide Devices
  Abstract

Characterizations of Al/Polyimide/Al capacitors in a temperature range extended up to 400°C are presented. The aim is to determine the retained BPDA/PPD polyimide (PI) intrinsic dielectric and conduction properties, as a first stage in the evaluation of its ability to be applied as a passivation material for high temperature operating silicon carbide power devices. The dielectric constant, dielectric loss factor, and the static leakage current of the “as-prepared” Al/PI/Al structures are strongly affected above 175°C, reaching critical values at 400°C with regard to the aimed application. However, an evolution of these characteristics after the sample exposure at high temperature is observed, resulting in a very good and stabilized electrical behavior even at 400°C.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
671-674
DOI
10.4028/www.scientific.net/MSF.556-557.671
Citation
S. Diaham, M. L. Locatelli, T. Lebey, "Study of Polyimide Films as Passivation for High Temperature High Voltage Silicon Carbide Devices", Materials Science Forum, Vols. 556-557, pp. 671-674, 2007
Online since
September 2007
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Price
$32.00
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