Paper Title:
Time-Dependent Dielectric Breakdown of Thermal Oxides on 4H-SiC
  Abstract

Thermal oxides on 4H-SiC are characterized using time-dependent dielectric breakdown techniques at electric fields between 6 and 10 MV/cm. At 250°C, oxides thermally-grown using N2O with NO annealing achieve a mean time to failure (MTTF) of 2300 hours at 6 MV/cm. Oxides grown in steam with NO annealing show approximately four times longer MTTF than N2O-grown oxides. At electric fields greater than 8 MV/cm, Fowler-Nordheim tunneling significantly reduces the expected failure times. For this reason, extrapolation of mean-time to failure at low fields must be performed by datapoints measured at lower electric fields.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
675-678
DOI
10.4028/www.scientific.net/MSF.556-557.675
Citation
K. Matocha, R. Beaupre, "Time-Dependent Dielectric Breakdown of Thermal Oxides on 4H-SiC", Materials Science Forum, Vols. 556-557, pp. 675-678, 2007
Online since
September 2007
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Price
$32.00
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