Paper Title:
Ab Initio Study of the Structural and Electronic Properties of the Graphene/SiC{0001} Interface
  Abstract

Employing density functional theory we investigate the model interface between 1 × 1-6H-SiC{0001} surfaces and graphene layers. We find that the first graphene layer is covalently bonded to the SiC substrate, opposing the earlier assumption of a weak van-der-Waals bonding. The interface at the Si-face is metallic, while on the C-face it remains semiconducting. Further graphene layers are then only weakly bound and the typical graphitic properties of the electronic structure appear.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
693-696
DOI
10.4028/www.scientific.net/MSF.556-557.693
Citation
A. Mattausch, O. Pankratov, "Ab Initio Study of the Structural and Electronic Properties of the Graphene/SiC{0001} Interface", Materials Science Forum, Vols. 556-557, pp. 693-696, 2007
Online since
September 2007
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Price
$32.00
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