Paper Title:
Low Specific Contact Resistance to 3C-SiC Grown on (100) Si Substrates
  Abstract

In this work, ohmic contacts, formed by 100nm Ni layer RTA annealed or not, were investigated on 3C-SiC epilayers exhibiting different nitrogen doping levels. The epilayers were grown on (100) silicon. Doping level (N) and eventual dopant contamination (Al) were analyzed by C-V and/or SIMS. The specific contact resistance was determined by using Transmission Line Model (TLM) patterns for each condition (doping and annealing). Our results clearly evidence that very low specific contact resistance (~10-51.cm²) is obtained on highly doped 3C-SiC epilayers, enlightening the interest of both material and Ni contacts for future devices fabrication.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
721-724
DOI
10.4028/www.scientific.net/MSF.556-557.721
Citation
A. E. Bazin, T. Chassagne, J. F. Michaud, A. Leycuras, M. Portail, M. Zielinski, E. Collard, D. Alquier, "Low Specific Contact Resistance to 3C-SiC Grown on (100) Si Substrates", Materials Science Forum, Vols. 556-557, pp. 721-724, 2007
Online since
September 2007
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Price
$32.00
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