Paper Title:
Nanolayered Au/Ti/Al Ohmic Contacts to P-Type SiC: Electrical, Morphological and Chemical Properties Depending on the Contact Composition
  Abstract

Electrical, morphological and chemical properties of nanolayered Au/Ti/Al ohmic contacts with different Ti:Al ratio are investigated. Contact resistivities of 1.42×10-5 ⋅cm2 and 1.21×10-5 ⋅cm2 are achieved for Au/Ti(70)/Al(30) and Au/Ti(30)/Al(70) contacts, respectively. It is found that the Ti:Al ratio does not affect the lowest resistivity value but influences on the optimal annealing temperature at which it is obtained. The different optimal annealing temperature provokes different element distributions and interface chemistry of the annealed contacts. An increase of the Al concentration in the contact composition causes essentially the surface morphology leading to an increase in surface roughness of the as-deposited and annealed contacts.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
725-728
DOI
10.4028/www.scientific.net/MSF.556-557.725
Citation
L. Kolaklieva, R. Kakanakov, I. Avramova, T. Marinova, "Nanolayered Au/Ti/Al Ohmic Contacts to P-Type SiC: Electrical, Morphological and Chemical Properties Depending on the Contact Composition ", Materials Science Forum, Vols. 556-557, pp. 725-728, 2007
Online since
September 2007
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$32.00
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