Paper Title:
CVD of 6H-SiC on Non-Basal Quasi Polar Faces
  Abstract

Crystal growth of 6H-SiC in two non-basal directions is reported. The two explored surfaces are the {1-103} plane, named qC-face, and the {1-10-3} plane, named qSi-face. The asgrown bulk surfaces exhibit a smooth structure with a small ridging effect originating from the miscut of the seed crystals. Layers, epitaxially grown on the chemically-mechanically polished qCface, nicely replicate the original crystal structure and show no sign of polytype mixing. Lowtemperature photoluminescence measurements collected on the epilayers exhibit near bandedge spectral characteristics indicative of good quality 6H-SiC.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
73-76
DOI
10.4028/www.scientific.net/MSF.556-557.73
Citation
Y. Shishkin, S. P. Rao, O. Kordina, I. Agafonov, A. A. Maltsev, J. ul Hassan, A. Henry, C. Moisson, S. E. Saddow, "CVD of 6H-SiC on Non-Basal Quasi Polar Faces", Materials Science Forum, Vols. 556-557, pp. 73-76, 2007
Online since
September 2007
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Price
$32.00
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