Paper Title:
4H-SiC Planar MESFETs on High-Purity Semi-Insulating Substrates
  Abstract

Planar MESFETs were fabricated on high-purity semi-insulating (HPSI) 4H-SiC substrates. The saturation drain current of the fabricated MESFETs with a gate length of 0.5 μm and a gate width of 100 μm was 430 mA/mm, and the transconductance was 25 mS/mm. The maximum oscillation frequency and cut-off frequency were 26.4 GHz and 7.2 GHz, respectively. The power gain was 8.4 dB and the maximum output power density was 2.8 W/mm for operation of class A at CW 2 GHz. MESFETs on HPSI substrates showed no current instability and much higher output power density in comparison to MESFETs on vanadium-doped SI substrates.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
763-766
DOI
10.4028/www.scientific.net/MSF.556-557.763
Citation
J. H. Yim, H. K. Song, J. H. Moon, H. S. Seo, J. H. Lee, H. J. Na, J. B. Lee, H. J. Kim, "4H-SiC Planar MESFETs on High-Purity Semi-Insulating Substrates", Materials Science Forum, Vols. 556-557, pp. 763-766, 2007
Online since
September 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Konstantin Vassilevski, J. Hedley, Alton B. Horsfall, C. Mark Johnson, Nicolas G. Wright
925
Authors: Letian Zhang, Wenfa Xie, Yong Hou, Aiwu Li, Jie Zheng, Wei Zheng, Yushu Zhang
Abstract:Ge-doped silica glass films were fabricated on Si (100) substrates for core materials of waveguide using flame hydrolysis deposition. Then...
1837
Authors: Md. Mosharaf Hossain Bhuiyan, Tsuyoshi Ueda, Tomoaki Ikegami
Abstract:SnO2 thin films have been grown on Si3N4 substrates and also on Al2O3 sensor substrates with Pt interdigitated electrodes by the pulsed...
223
Authors: Mei Ping Jiang, Meng Zhao, Jin Hua Li
Optical/Electronic/Magnetic Materials
Abstract:Using vanadyl acetylacetonate (C10H14O5V) as precursor, use Tantalum Ethoxide...
2177
Authors: Geunsik Lim, Tariq Manzur, Aravinda Kar
Chapter 6: SiC Devices, Circuits and Systems
Abstract:An uncooled SiC-based electro-optic device is developed for gas sensing applications. P-type dopants Ga, Sc, P and Al are incorporated into...
1195