Paper Title:
4H-SiC Power BJTs with High Current Gain and Low On-Resistance
  Abstract

4H-SiC BJTs have been fabricated with varying geometrical designs. The maximum value of the current gain was about 30 at IC=85 mA, VCE=14 V and room temperature (RT) for a 20 μm emitter width structure. A collector-emitter voltage drop VCE of 2 V at a forward collector current 55 mA (JC = 128 A/cm2) was obtained and a specific on-resistance of 15.4 m2·cm2 was extracted at RT. Optimum emitter finger widths and base-contact implant distances were derived from measurement. The temperature dependent DC I-V characteristics of the BJTs have been studied resulting in 45 % reduction of the gain and 75 % increase of the on-resistance at 225 oC compared to RT. Forward-bias stress on SiC BJTs was investigated and about 20 % reduction of the initial current gain was found after 27.5 hours. Resistive switching measurements with packaged SiC BJTs were performed showing a resistive fast turn-on with a VCE fall-time of 90 ns. The results indicate that significantly faster switching can be obtained by actively controlling the base current.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
767-770
DOI
10.4028/www.scientific.net/MSF.556-557.767
Citation
H. S. Lee, M. Domeij, C. M. Zetterling, M. Östling, "4H-SiC Power BJTs with High Current Gain and Low On-Resistance", Materials Science Forum, Vols. 556-557, pp. 767-770, 2007
Online since
September 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Martin Domeij, Hyung Seok Lee, Carl Mikael Zetterling, Mikael Östling, Adolf Schöner
Abstract:This paper reports the fabrication of epitaxial 4H-SiC bipolar junction transistors (BJTs) with a maximum current gain β=64 and a breakdown...
1425
Authors: Hyung Seok Lee, Martin Domeij, Carl Mikael Zetterling, Reza Ghandi, Mikael Östling, Fredrik Allerstam, Einar Ö. Sveinbjörnsson
Abstract:This paper reports a 4H-SiC bipolar junction transistor (BJT) with a breakdown voltage (BVCEO) of 1200 V, a maximum current gain (β) of 60...
1151
Authors: Martin Domeij, Carina Zaring, Andrei O. Konstantinov, Muhammad Nawaz, Jan Olov Svedberg, Krister Gumaelius, Imre Keri, Anders Lindgren, Bo Hammarlund, Mikael Östling, Mats Reimark
Abstract:This paper reports large active area (15 mm2) 4H-SiC BJTs with a low VCESAT=0.6 V at IC=20 A (JC=133 A/cm2) and an open-base breakdown...
1033
Authors: Martin Domeij, Anders Lindgren, Carina Zaring, Andrei O. Konstantinov, Krister Gumaelius, Hakan Grenell, Imre Keri, Jan Olov Svedberg, Mats Reimark
Abstract:Vertical epitaxial NPN SiC BJTs for 1200 V rating were fabricated. Very low collector-emitter saturation voltages VCESAT=0.5 V at IC=6 A...
686
Authors: Arash Salemi, Hossein Elahipanah, Carl Mikael Zetterling, Mikael Östling
4.4 HV Devices
Abstract:The influence of varying the emitter-base geometry, i.e., the emitter width (WE), emitter contact–emitter edge distance...
958