Paper Title:
9 kV 4H-SiC IGBTs with 88 mΩ·cm2 of R diff, on
  Abstract

SiC IGBTs are suitable for high power, high temperature applications. For the first time, the design and fabrication of 9 kV planar p-IGBTs on 4H-SiC are reported in this paper. A differential on-resistance of ~ 88 m(cm2 at a gate bias of –20 V is achieved at 25°C, and decreases to ~24.8 m(cm2 at 200°C. The device exhibits a blocking voltage of 9 kV with a leakage current density of 0.1 mA/cm2. The hole channel mobility is 6.5 cm2/V-s at room temperature with a threshold voltage of –6.5 V resulting in enhanced conduction capability. Inductive switching tests have shown that IGBTs feature fast switching capability at both room and elevated temperatures.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
771-774
DOI
10.4028/www.scientific.net/MSF.556-557.771
Citation
Q. C. J. Zhang, C. Jonas, B. Heath, M. K. Das, S. H. Ryu, A. K. Agarwal, J. W. Palmour, "9 kV 4H-SiC IGBTs with 88 mΩ·cm2 of R diff, on", Materials Science Forum, Vols. 556-557, pp. 771-774, 2007
Online since
September 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Jeong Hyun Moon, Da Il Eom, Sang Yong No, Ho Keun Song, Jeong Hyuk Yim, Hoon Joo Na, Jae Bin Lee, Hyeong Joon Kim
Abstract:The La2O3 and Al2O3/La2O3 layers were grown on 4H-SiC by atomic layer deposition (ALD) method. The electrical properties of La2O3 on 4H-SiC...
1083
Authors: Konstantin Vassilevski, Irina P. Nikitina, Alton B. Horsfall, Nicolas G. Wright, Anthony G. O'Neill, Keith P. Hilton, A.G. Munday, A.J. Hydes, Michael J. Uren, C. Mark Johnson
Abstract:High voltage 4H-SiC Schottky diodes with single-zone junction termination extension (JTE) have been fabricated and characterised. Commercial...
873
Authors: Brett A. Hull, Charlotte Jonas, Sei Hyung Ryu, Mrinal K. Das, Michael J. O'Loughlin, Fatima Husna, Robert Callanan, Jim Richmond, Anant K. Agarwal, John W. Palmour, Charles Scozzie
Abstract:Large area (8 mm x 7 mm) 1200 V 4H-SiC DMOSFETs with a specific on-resistance as low as 9 m•cm2 (at VGS = 20 V) able to conduct 60 A at a...
749
Authors: Lin Cheng, Anant K. Agarwal, Michael J. O'Loughlin, Craig Capell, Khiem Lam, Charlotte Jonas, Jim Richmond, Al Burk, John W. Palmour, Aderinto A. Ogunniyi, Heather K. O'Brien, Charles Scozzie
Chapter 10: Device and Application
Abstract:In this work, we report our recently developed 16 kV, 1 cm2, 4H-SiC PiN diode results. The SiC PiN diode was built on a 120 µm,...
895