Paper Title:
Critical Reliability Issues for SiC Power MOSFETs Operated at High Temperature
  Abstract

This paper discusses critical reliability issues and their countermeasures for vertically structured poly-Si gate n-channel power MOSFETs (DMOS) on 4H-SiC when operated at an elevated temperature of more than 300°C for a long period of time. Two destructive failures were identified in a storage life test at 500°C: a short-circuit between the source and the gate and a disconnection at the n+ source contact. The former was caused by interlayer dielectric erosion and/or Al spearing into the poly-Si gate; the latter was caused by the disappearance of the NiSix contact layer. Effective and practical countermeasures were devised and implemented. Device lifetime against the three different failure mechanisms was improved in every case by at least one order of magnitude.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
779-782
DOI
10.4028/www.scientific.net/MSF.556-557.779
Citation
S. Tanimoto, T. Suzuki, A. Hanamura, M. Hoshi, T. Shinohara, K. Arai, "Critical Reliability Issues for SiC Power MOSFETs Operated at High Temperature ", Materials Science Forum, Vols. 556-557, pp. 779-782, 2007
Online since
September 2007
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Price
$32.00
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