Paper Title:
Electrical Properties of p-Channel MOSFETs Fabricated on 4H- and 6H-SiC
  Abstract

It is of great importance to investigate the electrical properties of SiC p-channel MOSFETs for development of SiC CMOS technology. In the present report, we investigated dependences of electrical properties of the SiC p-channel MOSFETs on SiC poly-types. The on-state characteristics (channel mobility, threshold voltage, and temperature dependences) for the 4H- and 6H-SiC p-channel MOSFETs showed similar behavior, although those of 4H-SiC n-channel MOSFETs are usually quite different from those of 6H-SiC. These results might be caused by the similar SiC MOS interface state distribution around the valence band edge.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
783-786
DOI
10.4028/www.scientific.net/MSF.556-557.783
Citation
M. Okamoto, M. Tanaka, T. Yatsuo, K. Fukuda, "Electrical Properties of p-Channel MOSFETs Fabricated on 4H- and 6H-SiC", Materials Science Forum, Vols. 556-557, pp. 783-786, 2007
Online since
September 2007
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$32.00
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