Paper Title:
High Frequency 4H-SiC MOSFETs
  Abstract

We present new results on 4H-SiC RF power MOSFETs. By improvements in device layout we obtain better high frequency performance compared to the first generation of devices. An extrinsic transition frequency fT=11.4 GHz was achieved and fmax=11.2 GHz for a device with 0.5 µm nominal channel length. Functional devices with 0.3 µm nominal channel length were also made. These devices gave fT=15.1 GHz and fmax=19.5 GHz but they have lower breakdown voltages and therefore lower overall performance. The measured devices are double fingered with 0.8 mm total gate width.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
795-798
DOI
10.4028/www.scientific.net/MSF.556-557.795
Citation
G. Gudjónsson, F. Allerstam, P. Å. Nilsson, H. Hjelmgren, E. Ö. Sveinbjörnsson, H. Zirath, T. Rödle, R. Jos, "High Frequency 4H-SiC MOSFETs", Materials Science Forum, Vols. 556-557, pp. 795-798, 2007
Online since
September 2007
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Price
$32.00
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