Paper Title:
High Temperature Characterisation of 4H-SiC VJFET
  Abstract

4H-SiC depletion mode (normally-on) VJFETs were fabricated and characterised at temperatures up to 377 °C. The device current density at drain voltage of 50 V drops down from 54 A/cm2 at room temperature to around 42 A/cm2 at 377 °C which is a 20 % reduction in drain current density. This drop in drain currents is much lower than previously reported values of a 30 % drop in JFETs at high temperatures. The average temperature coefficient of the threshold voltage was found to be -1.36 mV/°C which is smaller than for most Si FETs. We have found that these devices have shown good I-V characteristics upto 377 °C along with being able to retain its characteristics on being retested at room temperature.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
799-802
DOI
10.4028/www.scientific.net/MSF.556-557.799
Citation
P. Bhatnagar, N. G. Wright, A. B. Horsfall, K. Vassilevski, C. M. Johnson, M. J. Uren, K. P. Hilton, A.G. Munday, A.J. Hydes, "High Temperature Characterisation of 4H-SiC VJFET", Materials Science Forum, Vols. 556-557, pp. 799-802, 2007
Online since
September 2007
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Price
$32.00
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