Paper Title:
Increased Channel Mobility in 4H-SiC UMOSFETs Using On-Axis Substrates
  Abstract

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Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
807-810
DOI
10.4028/www.scientific.net/MSF.556-557.807
Citation
H. Yano, H. Nakao, T. Hatayama, Y. Uraoka, T. Fuyuki, "Increased Channel Mobility in 4H-SiC UMOSFETs Using On-Axis Substrates", Materials Science Forum, Vols. 556-557, pp. 807-810, 2007
Online since
September 2007
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