Paper Title:
Investigation of Drain Current Saturation in 4H-SiC MOSFETs
  Abstract

Electronic measurement coupled with device and material modeling of lateral longchannel 4H-SiC MOSFETs is used to investigate current saturation. Observed increases in drain current with increases in temperature are shown to result from a reduction in interface charge trapping. If trapping is ignored, the saturation current is predicted to decrease with increasing temperature as a result of interface phonon scattering.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
811-814
DOI
10.4028/www.scientific.net/MSF.556-557.811
Citation
G. Pennington, S. Potbhare, N. Goldsman, D. B. Habersat, A. J. Lelis, J.M. McGarrity, C.R. Ashman, "Investigation of Drain Current Saturation in 4H-SiC MOSFETs", Materials Science Forum, Vols. 556-557, pp. 811-814, 2007
Online since
September 2007
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Price
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