Paper Title:
Numerical Investigation of the DC and RF Performances for a 4H-SiC Double Delta-Doped Channel MESFET Having Various Delta-Doping Concentrations
  Abstract

A double delta-doped channel 4H-SiC MESFET is proposed to kick out degradation of the DC and RF performances caused by the surface traps, by forming a quantum-well-like potential well and separating an effective channel from the surface. To obtain an optimum device structure, the DC and RF performances of double delta-doped channel MESFETs having various delta-doping concentrations but the same pinch-off voltage with that of conventional MESFET were also investigated. The SilvacoTM simulation results show that the double delta-doped channel MESFET achieved more improvement of the drain current, the cut-off frequency, and the maximum oscillation frequency for higher delta-doping concentration near the gate. In all cases, DC and RF performances for double delta-doped channel MESFETs are much improved than those of the conventional MESFET.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
823-826
DOI
10.4028/www.scientific.net/MSF.556-557.823
Citation
I. H. Kang, W. Bahng, S. C. Kim, S. J. Joo, N. K. Kim, "Numerical Investigation of the DC and RF Performances for a 4H-SiC Double Delta-Doped Channel MESFET Having Various Delta-Doping Concentrations", Materials Science Forum, Vols. 556-557, pp. 823-826, 2007
Online since
September 2007
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