Paper Title:
Realization of Low On-Resistance 4H-SiC Power MOSFETs by Using Retrograde Profile in P-Body
  Abstract

Inversion-type 4H-SiC power MOSFETs using p-body implanted with retrograde profiles have been fabricated. The Al concentration at the p-body surface (Nas) is varied in the range from 5×1015 to 2×1018 cm-3. The MOSFETs show normally-off characteristics. While the Ron is 3 cm2 at Eox = (Vg-Vth)/dox ≅ 3 MV/cm for the MOSFET with the Nas of 2×1018 cm-3, the Ron is reduced by a decrease in the Nas and 26 mcm2 is attained for the device with the Nas of 5×1015 cm-3. The inversion channel mobility and threshold voltage are improved with a decrease in the Nas. By modifying the structural parameter of the MOSFET, a still smaller Ron of 7 mcm2 is achieved with a blocking voltage of 1.3 kV.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
827-830
DOI
10.4028/www.scientific.net/MSF.556-557.827
Citation
K. Fujihira, N. Miura, T. Watanabe, Y. Nakao, N. Yutani, K. Ohtsuka, M. Imaizumi, T. Takami, T. Oomori, "Realization of Low On-Resistance 4H-SiC Power MOSFETs by Using Retrograde Profile in P-Body", Materials Science Forum, Vols. 556-557, pp. 827-830, 2007
Online since
September 2007
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Price
$32.00
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