Paper Title:
SiC Field Effect Transistor Technology Demonstrating Prolonged Stable Operation at 500 °C
  Abstract

While there have been numerous reports of short-term transistor operation at 500 °C or above, these devices have previously not demonstrated sufficient long-term operational durability at 500 °C to be considered viable for most envisioned applications. This paper reports the development of SiC field effect transistors capable of long-term electrical operation at 500 °C. A 6H-SiC MESFET was packaged and subjected to continuous electrical operation while residing in a 500 °C oven in oxidizing air atmosphere for over 2400 hours. The transistor gain, saturation current (IDSS), and on-resistance (RDS) changed by less than 20% from initial values throughout the duration of the biased 500 °C test. Another high-temperature packaged 6H-SiC MESFET was employed to form a simple one-stage high-temperature low-frequency voltage amplifier. This single-stage common-source amplifier demonstrated stable continuous electrical operation (negligible changes to gain and operating biases) for over 600 hours while residing in a 500 °C air ambient oven. In both cases, increased leakage from annealing of the Schottky gate-to-channel diode was the dominant transistor degradation mechanism that limited the duration of 500 °C electrical operation.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
831-834
DOI
10.4028/www.scientific.net/MSF.556-557.831
Citation
P. G. Neudeck, D. J. Spry, L. Y. Chen, R. S. Okojie, G. M. Beheim, R. D. Meredith, T. L. Ferrier, "SiC Field Effect Transistor Technology Demonstrating Prolonged Stable Operation at 500 °C", Materials Science Forum, Vols. 556-557, pp. 831-834, 2007
Online since
September 2007
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Price
$32.00
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