Paper Title:
600 V 100 A 4H-SiC Junction Barrier Schottky Diode with Guard Rings Termination
  Abstract

4H-SiC SBDs have been commercialized for power application devices. However, the maximum current of these SBDs is 20A. In this work, we designed a JBS (junction barrier Schottky) diode structure and the fabrication processes to be optimized. The current and breakdown voltage were over 100 A and 660 V at Ir = 1 mA/cm2, respectively. The recovery characteristics of the JBS diode are much superior to those of the Si-FRD while it is comparable to those of the commercially available SiC-SBD at elevated temperatures up to 125°C..

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
857-860
DOI
10.4028/www.scientific.net/MSF.556-557.857
Citation
T. Yamamoto, T. Endo, N. Kato, H. Nakamura, T. Sakakibara, "600 V 100 A 4H-SiC Junction Barrier Schottky Diode with Guard Rings Termination", Materials Science Forum, Vols. 556-557, pp. 857-860, 2007
Online since
September 2007
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Price
$32.00
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