Paper Title:
Breakdown Voltage Characteristics of FLR-Assisted SiC-SBD Formed by Aluminum Metal Junction Edge Termination
  Abstract

This paper demonstrates the breakdown voltage characteristics of different edge termination structures including aluminum (Al)-deposited guard ring and Al-deposited guard ringassisted field limiting ring (FLR) for a 4H silicon carbide (SiC) Schottky barrier diode (SBD). In order to investigate the application feasibility of the Al-deposited junction termination to a high breakdown voltage SiC-SBD, two types of SiC-SBDs are fabricated using conventional photolithography, electron beam evaporation, and thermal treatment techniques without ion implantation and thermal oxidation procedures. The breakdown voltage characteristics of the SiCSBDs are significantly dependent on the Al-deposited edge termination. The SiC-SBD without the Al-deposited edge termination shows less than 250 V breakdown voltage, while the Al-deposited guard ring and Al-deposited guard ring-assisted FLR structures show roughly 700 V and 1200 V breakdown voltages, respectively. The prominent improvement in the breakdown voltage characteristics is attributed to the electric field lowering at the Schottky contact edge by the Al deposition edge termination.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
861-864
DOI
10.4028/www.scientific.net/MSF.556-557.861
Citation
S.J. Kim, Y.S. Choi, S.J. Yu, S. C. Kim, W. Bahng, K.H. Lee, "Breakdown Voltage Characteristics of FLR-Assisted SiC-SBD Formed by Aluminum Metal Junction Edge Termination", Materials Science Forum, Vols. 556-557, pp. 861-864, 2007
Online since
September 2007
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Price
$32.00
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