Paper Title:
Comparison between Schottky Diodes with Oxide Ramp Termination on Silicon Carbide and Diamond
  Abstract

A classical implementation of the field plate technique is the oxide ramp termination. This paper presents for the first time a comparison between SiC and diamond Schottky barrier diodes (SBD) using this termination. The influences of the ramp angle and oxide thickness on the diodes electrical performance are investigated for both punch-through (PT) and non punch-through (nPT) structures. The efficiency of the termination is also evaluated.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
865-868
DOI
10.4028/www.scientific.net/MSF.556-557.865
Citation
G. Brezeanu, M. Brezeanu, F. Udrea, G. Amaratunga, C. Boianceanu, M. Badila, K. Zekentes, A. Visoreanu, "Comparison between Schottky Diodes with Oxide Ramp Termination on Silicon Carbide and Diamond", Materials Science Forum, Vols. 556-557, pp. 865-868, 2007
Online since
September 2007
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Price
$32.00
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