Paper Title:
FLR Geometry Dependence of Breakdown Voltage Characteristics for JBS-Assisted FLR SiC-SBD
  Abstract

We have investigated the field limiting ring (FLR) geometry dependence of breakdown voltage characteristics for a junction barrier Schottky (JBS)-assisted FLR SiC-SBD. The SiC-SBDs having a guard ring-assisted FLR surrounding a Schottky contact edge and an internal ring inside Schottky contact were fabricated. The breakdown voltage characteristics of the JBS-assisted FLR SiC-SBD are significantly dependent on the width, spacing, and number of FLR. The breakdown voltage characteristic is improved as either the FLR width and FLR number increase or the FLR spacing decreases. Approximately 1650 V maximal breakdown voltage, corresponding to 82% ideal breakdown voltage, is observed with seven FLRs having 5 2m width and 1 2m spacing.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
869-872
DOI
10.4028/www.scientific.net/MSF.556-557.869
Citation
S.J. Kim, S. Kim, S. C. Kim, I. H. Kang, K.H. Lee, T. Matsuoka, "FLR Geometry Dependence of Breakdown Voltage Characteristics for JBS-Assisted FLR SiC-SBD ", Materials Science Forum, Vols. 556-557, pp. 869-872, 2007
Online since
September 2007
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$32.00
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