Paper Title:
Simulation, Fabrication and Characterization of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)
  Abstract

The calculation for 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) was carried out by device simulation and the optimized device structure was fabricated. The best characteristics of the Super-SBDs were breakdown voltage of 2700V and the specific on-resistance of 2.57m*cm2. The world record of Bariga’s Figure of Merit (BFOM) for SiC-SBD expressed by 4Vbd 2/Ron was improved to 11,354MW/cm2.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
881-884
DOI
10.4028/www.scientific.net/MSF.556-557.881
Citation
C. Ota, J. Nishio, T. Hatakeyama, T. Shinohe, K. Kojima, S. I. Nishizawa, H. Ohashi, "Simulation, Fabrication and Characterization of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)", Materials Science Forum, Vols. 556-557, pp. 881-884, 2007
Online since
September 2007
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Price
$35.00
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