Paper Title:
The Influence of In-Grown Stacking Faults on the Reverse Current-Voltage Characteristics of 4H-SiC Schottky Barrier Diodes
  Abstract

The area where 4H-SiC SBDs showed high reverse currents was extracted. After KOH etching, the in-grown SF on the basal plane, composed of a straight etch line with a pair of tilted oval pits and additional etch pits forming an isosceles triangle, was observed on some devices. All of the devices containing this SF structure showed large reverse leakage currents in spite of the good forward I-V characteristics. We speculate that this in-grown SF includes another planar fault on the {1-100} plane besides the basal plane which has a great influence on reverse currents of SBDs.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
885-888
DOI
10.4028/www.scientific.net/MSF.556-557.885
Citation
S. Harada, Y. Namikawa, "The Influence of In-Grown Stacking Faults on the Reverse Current-Voltage Characteristics of 4H-SiC Schottky Barrier Diodes", Materials Science Forum, Vols. 556-557, pp. 885-888, 2007
Online since
September 2007
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